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Improving atmospheric elements detection limits in III-V semiconductor materials (GaN, AlGaN, GaAs, AlGaAs, AlInAs, InP)

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F. Cristiano, M. Shayesteh, R. Duffy, K. Huet, F. Mazzamuto, Y. Qiu, M. Quillec, H.H. Henrichsen, P.F. Nielsen, D.H. Petersen, A. La Magna, G. Caruso, S. Boninelli « Defect evolution and dopant activation in laser annealed Si and Ge », Materials Science in Semiconductor Processing, Volume 42, Part 2, Pages 188-195, February 2016
J. Aubin, J. M. Hartmann, M. Veillerot, Z. Essa, B. Sermage, « Very low temperature (450 °C) selective epitaxial growth of heavily in situ boron-doped SiGe layers », Semiconductor Science and Technology, Volume 30, 115006, October 2015
Y. Qiu, F. Cristiano, K. Huet, F. Mazzamuto, G. Fisicaro, A. La Magna, M. Quillec, N. Cherkashin, H. Wang, S. Duguay, D. Blavette « Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon », Nano Letters, 14 (4), 1769-1775, March 2014
Z. Essa, F. Cristiano, Y. Spiegel, Y. Qiu, P. Boulenc, M. Quillec, N. Taleb, N. Zographos, E. Bedel-Pereira, V. Mortet, A. Burenkov, M. Hackenberg, F. Torregrosa, C. Tavernier, « Large boron-interstitial cluster modelling in BF₃ plasma implanted silicon », Physica Status Solidi (c), Volume 11, Issue 1, pages 117–120, January 2014
G. Fisicaro, L. Pelaz, M. Aboy, P. Lopez, M. Italia, K. Huet, F. Cristiano, Z. Essa, Q. Yang, E. Bedel-Pereira, M. Quillec, A. La Magna, « Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing », Applied Physics Express, Volume 7, 021301, January 2014
M. Hackenberg, K. Huet, R. Negru, G. Fisicaro, A. La Magna, N. Taleb, M. Quillec, P. Pichler, « Simulation of the boron build-up formation during melting laser thermal annealing », Physica Status Solidi (c), Volume 11, Issue 1, pages 89–92, January 2014
G. Fisicaro, L. Pelaz, M. Aboy, P. Lopez, M. Italia, K. Huet, F. Cristiano, Z. Essa, Q. Yang, E. Bedel-Pereira, M. Hackenberg, P. Pichler, M. Quillec, N. Taleb, A. La Magna, « Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach » in Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference, pp.33-36, Sept. 2013
M. Hackenberg, M. Rommel, M. Rumler, J. Lorenz, P. Pichler, K. Huet, R. Negru, G. Fisicaro, A. La Magna, N. Taleb, M. Quillec, « Melt depth and time variations during pulsed laser thermal annealing with one and more pulses », in Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European, pp.214-217, Sept. 2013
G. Fisicaro, K. Huet, R. Negru, M. Hackenberg, P. Pichler, N. Taleb, A. La Magna, « Anomalous Impurity Segregation and Local Bonding Fluctuation in l-Si », Physical Review Letters, Vol. 110, Iss. 11, March 2013
Z. Essa, F. Cristiano, Y. Spiegel, P. Boulenc, Y. Qiu, M. Quillec, N. Taleb, A. Burenkov, M. Hackenberg, E. Bedel-Pereira, V. Mortet, F. Torregrosa, C. Tavernier, « BF₃ PIII modeling: Implantation, amorphisation and diffusion », AIP Conference Proceedings, 1496, 237-240, 2012
F. Cristiano, Z. Essa, Y. Qiu, Y. Spiegel, F. Torregrosa, J. Duchaine, P. Boulenc, C. Tavernier, O. Cojocaru, D. Blavette, D. Mangelinck, P.F. Fazzini, M. Quillec, M. Bazizi, M. Hackenberg, S. Boninelli, « Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-amorphised silicon, » in Junction Technology (IWJT), 2012 12th International Workshop, pp.131-137, May 2012

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